CANDID meeting in Geneva 2nd October 2003
 

Medipix2 assembly (front and back masks).
The dimensions: Pixel 55, metal 25, SiN 10, 1st bumpo 20, 2nd bumpo 30 and back SiN 100 um.

1. Full front mask
2. Part front mask
3. Etching
4. Front metal
5. SiN opening
6. 1st bumpo
7. 2nd bumbo
8. Back metal and SiN opening (Full mask)
9. Back metal and SiN opening (single detector)
 

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RTA for small and large epitixail GaAs layers.
Fast RTA: increasing temperature from 0 0C to 850 0C is 15sec; annealing time at 850 0C is 10sec; cooling from 850 0C to 0 0C is 30sec. This annealing is successful for small sample only (up to about 4cm2).
SLOW RTA: increasing temperature from 0 0C to 800 0C is 60sec and from 800 0C to 850 0C is 15sec; annealing time at 850 0C is 10sec; cooling from 850 0C to 0 0C is 30sec.

1. Fast RTA
2. Slow RTA